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dc.contributor.authorBerthod, Charly
dc.contributor.authorStrandberg, Rune
dc.contributor.authorOdden, Jan Ove
dc.date.accessioned2015-08-31T12:26:37Z
dc.date.available2015-08-31T12:26:37Z
dc.date.issued2015
dc.identifier.citationBerthod, C., Strandberg, R. & Odden, J.O.: Temperature Coefficients of Compensated Silicon Solar Cells – Influence of Ingot Position and Blend-in-ratio. Energy Procedia, 77(0), 15-20, doi:10.1016/j.egypro.2015.07.004nb_NO
dc.identifier.issn1876-6102
dc.identifier.urihttp://hdl.handle.net/11250/298292
dc.descriptionPublished version of an article in the journal: Energy Procedia. Also available on Science Direct: http://dx.doi.org/10.1016/j.egypro.2015.07.004nb_NO
dc.description.abstractSolar-grade silicon made from a metallurgical route presents boron and phosphorus compensation. Earlier work has shown that cells made from such material produce more energy than reference polysilicon modules when the temperature and irradiance is high. In the present study, solar cells from two different ingots with different blend-in-ratios were made from wafers at varying ingot heights in order to investigate how the temperature coefficients vary with compensation level and ingot height. The results suggest that solar modules made with solar cells from different ingot heights will perform differently at high temperature. It was also observed that the compensation level seems to have a smaller impact on the temperature coefficients than the ingot height.nb_NO
dc.language.isoengnb_NO
dc.publisherElseviernb_NO
dc.rightsNavngivelse-Ikkekommersiell-IngenBearbeidelse 3.0 Norge*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/no/*
dc.titleTemperature coefficients of compensated silicon solar cells - influence of ingot position and blend-in-rationb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.source.pagenumber15-20nb_NO
dc.source.volume77nb_NO
dc.source.journalEnergy Proceidanb_NO


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