Spin transport in ferromagnetic/normal-metal tunnel junction arrays
Journal article, Peer reviewed
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OriginalversjonJohansson, J. (2012). Spin transport in ferromagnetic/normal-metal tunnel junction arrays. Physical Review B, 85(9). doi: 10.1103/PhysRevB.85.094421 10.1103/PhysRevB.85.094421
An array of alternating ferromagnetic and normal-metal islands separated by small tunnel junctions is theoretically investigated in the sequential tunneling regime. A numerical Monte Carlo method is used to calculate the transport properties. The spin-dependent tunneling currents give rise to nonequilibrium spin accumulation on the normal island. The tunneling magneto resistance (TMR) is calculated for a large range of array parameters. The TMR oscillates with bias voltage and can become negative for certain array parameters. We show that the long-range electrostatic interaction in the arrays can significantly increase the TMR; for experimentally accessible parameters the magnitude of the TMR can be as large as 100%.
Published version of an article in the journal: Physical Review B. Also available from the publisher:http://dx.doi.org/10.1103/PhysRevB.85.094421