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dc.contributor.authorGarcia, Alfredo Sanchez
dc.contributor.authorKristensen, Sissel Tind
dc.contributor.authorStrandberg, Rune
dc.date.accessioned2024-06-03T08:25:07Z
dc.date.available2024-06-03T08:25:07Z
dc.date.created2021-09-15T11:48:27Z
dc.date.issued2021
dc.identifier.citationGarcia, A. S., Kristensen, S. T. & Strandberg, R. (2021). Assessment of a New Analytical Expression for the Maximum-Power Point Voltage with Series Resistance. 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), 0961-0965.en_US
dc.identifier.isbn978-1-6654-1922-2
dc.identifier.issn0160-8371
dc.identifier.urihttps://hdl.handle.net/11250/3132189
dc.descriptionAuthor's accepted manuscript. © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en_US
dc.description.abstractThis work compares a recently developed analytical expression for the maximumpower point voltage with experimental data, to test its usability for crystalline silicon solar cells. The experimental data covers measurements from 18 multicrystalline silicon solar cells with different bulk resistivities and cell architectures. We show that the expression is able to predict the maximum power obtainable by the measured cells with relative discrepancies below 1%. Additionally, we compare the accuracy of this new expression with two already existing models.en_US
dc.language.isoengen_US
dc.publisherIEEEen_US
dc.relation.ispartof2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internasjonal*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/deed.no*
dc.titleAssessment of a New Analytical Expression for the Maximum-Power Point Voltage with Series Resistanceen_US
dc.typeChapteren_US
dc.description.versionacceptedVersionen_US
dc.rights.holder© 2021 IEEEen_US
dc.subject.nsiVDP::Teknologi: 500en_US
dc.source.pagenumber0961-0965en_US
dc.identifier.doihttps://doi.org/10.1109/PVSC43889.2021.9518399
dc.identifier.cristin1934489
cristin.qualitycode1


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Attribution-NonCommercial-NoDerivatives 4.0 Internasjonal
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