dc.contributor.author | de Padoue Shyikira, Antoine | |
dc.contributor.author | Akhtar, Naureen | |
dc.contributor.author | Skomedal, Gunstein | |
dc.contributor.author | Middleton, Peter Hugh | |
dc.date.accessioned | 2022-04-05T12:01:09Z | |
dc.date.available | 2022-04-05T12:01:09Z | |
dc.date.created | 2021-11-10T19:11:56Z | |
dc.date.issued | 2021 | |
dc.identifier.citation | de Padoue Shyikira, A., Akhtar, N., Skomedal, G., & Hugh Middleton, P. (2021). The effect of Mo and Ge reactive elements on high-temperature oxidation of higher manganese silicide. Corrosion Science, 194: 13. | en_US |
dc.identifier.issn | 1879-0496 | |
dc.identifier.uri | https://hdl.handle.net/11250/2989948 | |
dc.description.abstract | Higher manganese silicide (HMS) alloys (Mnx-αMoαSiy-βGeβ (x = 0.99–1.011, α = 0.005–0.02, y = 1.75, β = 0.005–0.01)) were studied to elucidate the effect of Mo and Ge pertaining to oxidation. Oxidation experiments were conducted using thermogravimetry and characterized using x-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). Isoconversion experiments below 450 ◦C, shows that doping (up to 2 at%) raises the oxidation potential of HMS. Isothermally, the oxidation rate reduces buy one order of magnitude by doping on Mn and/or Si sites from 0.5 to 2 at%, revealing that the dopants-based oxides do not lessen the robustness of SiO2 oxide. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Elsevier | en_US |
dc.rights | Navngivelse 4.0 Internasjonal | * |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/deed.no | * |
dc.title | The effect of Mo and Ge reactive elements on high-temperature oxidation of higher manganese silicide | en_US |
dc.type | Journal article | en_US |
dc.type | Peer reviewed | en_US |
dc.description.version | publishedVersion | en_US |
dc.rights.holder | © 2021 The Author(s) | en_US |
dc.subject.nsi | VDP::Teknologi: 500::Materialteknologi: 520 | en_US |
dc.source.pagenumber | 13 | en_US |
dc.source.volume | 194 | en_US |
dc.source.journal | Corrosion Science | en_US |
dc.identifier.doi | https://doi.org/10.1016/j.corsci.2021.109920 | |
dc.identifier.cristin | 1953391 | |
dc.source.articlenumber | 109920 | en_US |
cristin.qualitycode | 2 | |